SI3442BDV-T1-GE3 product image

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Product details

SI3442BDV-T1-GE3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: 6-TSOP

Description

N-Channel 20 V 3A (Ta) 860mW (Ta) Surface Mount 6-TSOP

Datasheet View datasheet

Specifications

Base Product Number: SI3442
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
Series: TrenchFET®
Supplier Device Package: 6-TSOP
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 1.8V @ 250µA