SI2331DS-T1-E3 product image

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Product details

SI2331DS-T1-E3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: SOT-23-3 (TO-236)

Description

P-Channel 12 V 3.2A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

Datasheet View datasheet

Specifications

Base Product Number: SI2331
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 12 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 6 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.6A, 4.5V
Series: TrenchFET®
Supplier Device Package: SOT-23-3 (TO-236)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±8V
Vgs(th) (Max) @ Id: 900mV @ 250µA