BSZ0904NSIATMA1 product image

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Product details

BSZ0904NSIATMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 30 V 18A (Ta), 40A (Tc) 2.1W (Ta), 37W (Tc) Surface Mount PG-TSDSON-8-FL

Datasheet View datasheet

Specifications

Base Product Number: BSZ0904
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: Schottky Diode (Body)
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1463 pF @ 15 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-PowerTDFN
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Series: OptiMOS™
Supplier Device Package: PG-TSDSON-8-FL
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 250µA