Product image not available

Product details

IRFH5204TRPBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 40 V 22A (Ta), 100A (Tc) 3.6W (Ta), 105W (Tc) Surface Mount PQFN (5x6)

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Power Dissipation (Max): 3.6W (Ta), 105W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V
Series: HEXFET®
Supplier Device Package: PQFN (5x6)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 100µA