FQPF19N20CYDTU product image

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Product details

FQPF19N20CYDTU

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220F-3 (Y-Forming)

Description

N-Channel 200 V 19A (Tc) 43W (Tc) Through Hole TO-220F-3 (Y-Forming)

Datasheet Not provided

Specifications

Base Product Number: FQPF1
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Series: QFET®
Supplier Device Package: TO-220F-3 (Y-Forming)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA