IRF7202TR product image

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Product details

IRF7202TR

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: 8-SO

Description

P-Channel 20 V 2.5A (Tc) 1.6W (Ta), 2.5W (Tc) Surface Mount 8-SO

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 20 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max): 1.6W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Series: HEXFET®
Supplier Device Package: 8-SO
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA