IRFHM830DTRPBF product image

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Product details

IRFHM830DTRPBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PQFN (3x3)

Description

N-Channel 30 V 20A (Ta), 40A (Tc) 2.8W (Ta), 37W (Tc) Surface Mount PQFN (3x3)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1797 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Series: HEXFET®
Supplier Device Package: PQFN (3x3)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.35V @ 50µA