SIS414DN-T1-GE3 product image

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Product details

SIS414DN-T1-GE3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: PowerPAK® 1212-8

Description

N-Channel 30 V 20A (Tc) 3.4W (Ta), 31W (Tc) Surface Mount PowerPAK® 1212-8

Datasheet View datasheet

Specifications

Base Product Number: SIS414
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 15 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: PowerPAK® 1212-8
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Series: TrenchFET®
Supplier Device Package: PowerPAK® 1212-8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 1.5V @ 250µA