SI3430DV-T1-GE3 product image

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Product details

SI3430DV-T1-GE3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 100 V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP

Datasheet View datasheet

Specifications

Base Product Number: SI3430
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max): 1.14W (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Series: -
Supplier Device Package: 6-TSOP
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)