TPCC8002-H(TE12LQM product image

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Product details

TPCC8002-H(TE12LQM

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - FETs, MOSFETs - Single
Package: 8-TSON Advance (3.3x3.3)

Description

N-Channel 30 V 22A (Ta) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

Datasheet View datasheet

Specifications

Base Product Number: TPCC8002
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-VDFN Exposed Pad
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Series: U-MOSV-H
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 1mA