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SSM3K303T(TE85L,F) product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

SSM3K303T(TE85L,F)

Availability on request

Manufacturer
Toshiba Semiconductor and Storage
Category
Transistors - FETs, MOSFETs - Single
Package
TSM

Description

N-Channel 30 V 2.9A (Ta) 700mW (Ta) Surface Mount TSM

Specifications
Base Product Number
SSM3K303
Current - Continuous Drain (Id) @ 25°C
2.9A (Ta)
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
3.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 10 V
Mfr
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package
Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)
700mW (Ta)
Rds On (Max) @ Id, Vgs
83mOhm @ 1.5A, 10V
Series
π-MOSVII
Supplier Device Package
TSM
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
2.6V @ 1mA