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Product details

IRFH5302DTRPBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 30 V 29A (Ta), 100A (Tc) 3.6W (Ta), 104W (Tc) Surface Mount PQFN (5x6) Single Die

Datasheet View datasheet

Specifications

Base Product Number: IRFH5302
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-PowerVDFN
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Series: HEXFET®
Supplier Device Package: PQFN (5x6) Single Die
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.35V @ 100µA