IRF7779L2TR1PBF product image

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Product details

IRF7779L2TR1PBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: DirectFET™ Isometric L8

Description

N-Channel 150 V 375A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Drain to Source Voltage (Vdss): 150 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: DirectFET™ Isometric L8
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Series: HEXFET®
Supplier Device Package: DirectFET™ Isometric L8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 5V @ 250µA