FCPF11N60NT product image

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Product details

FCPF11N60NT

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220F-3

Description

N-Channel 600 V 10.8A (Tc) 32.1W (Tc) Through Hole TO-220F-3

Datasheet View datasheet

Specifications

Base Product Number: FCPF11
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3 Full Pack
Power Dissipation (Max): 32.1W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Series: SuperMOS™
Supplier Device Package: TO-220F-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA