STB12NM50ND product image

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Product details

STB12NM50ND

Availability on request

Manufacturer: STMicroelectronics
Category: Transistors - FETs, MOSFETs - Single
Package: D²PAK (TO-263)

Description

N-Channel 500 V 11A (Tc) 100W (Tc) Surface Mount D²PAK (TO-263)

Datasheet Not provided

Specifications

Base Product Number: STB12N
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 500 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Mfr: STMicroelectronics
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Series: FDmesh™ II
Supplier Device Package: D²PAK (TO-263)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 5V @ 250µA