IRLB3813PBF product image

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Product details

IRLB3813PBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220AB

Description

N-Channel 30 V 260A (Tc) 230W (Tc) Through Hole TO-220AB

Datasheet View datasheet

Specifications

Base Product Number: IRLB3813
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 15 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 60A, 10V
Series: HEXFET®
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.35V @ 150µA