IXFN25N90 product image

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Product details

IXFN25N90

Availability on request

Manufacturer: IXYS
Category: Transistors - FETs, MOSFETs - Single
Package: SOT-227B

Description

N-Channel 900 V 25A (Tc) 600W (Tc) Chassis Mount SOT-227B

Datasheet View datasheet

Specifications

Base Product Number: IXFN25
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 900 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Mfr: IXYS
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: SOT-227-4, miniBLOC
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
Series: HiPerFET™
Supplier Device Package: SOT-227B
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 5V @ 8mA