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Product details

IXFG55N50

Availability on request

Manufacturer: IXYS
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 500 V 48A (Tc) 400W (Tc) Through Hole ISO264™

Datasheet Not provided

Specifications

Base Product Number: IXFG55
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 500 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Mfr: IXYS
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-264-3, TO-264AA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
Series: HiPerFET™
Supplier Device Package: ISO264™
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4.5V @ 8mA