Goford Semiconductor
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Product details
IPB12CN10N G
Availability on request
Description
N-Channel 100 V 67A (Tc) 125W (Tc) Surface Mount PG-TO263-3
Datasheet
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Specifications
- Base Product Number
- IPB12C
- Current - Continuous Drain (Id) @ 25°C
- 67A (Tc)
- Drain to Source Voltage (Vdss)
- 100 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 65 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 4320 pF @ 50 V
- Mfr
- Infineon Technologies
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Package
- Tape & Reel (TR)
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Power Dissipation (Max)
- 125W (Tc)
- Rds On (Max) @ Id, Vgs
- 12.6mOhm @ 67A, 10V
- Series
- OptiMOS™
- Supplier Device Package
- PG-TO263-3
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±20V
- Vgs(th) (Max) @ Id
- 4V @ 83µA