PSMN102-200Y,115 product image

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Product details

PSMN102-200Y,115

Availability on request

Manufacturer: Nexperia USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: LFPAK56, Power-SO8

Description

N-Channel 200 V 21.5A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8

Datasheet View datasheet

Specifications

Base Product Number: PSMN102
Current - Continuous Drain (Id) @ 25°C: 21.5A (Tc)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1568 pF @ 30 V
Mfr: Nexperia USA Inc.
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: SC-100, SOT-669
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 12A, 10V
Series: TrenchMOS™
Supplier Device Package: LFPAK56, Power-SO8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA