IPB042N03LGATMA1 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

IPB042N03LGATMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO263-3

Description

N-Channel 30 V 70A (Tc) 79W (Tc) Surface Mount PG-TO263-3

Datasheet View datasheet

Specifications

Base Product Number: IPB042N
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Series: OptiMOS™
Supplier Device Package: PG-TO263-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.2V @ 250µA