IRFP4468PBF product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

IRFP4468PBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: TO-247AC

Description

N-Channel 100 V 195A (Tc) 520W (Tc) Through Hole TO-247AC

Datasheet View datasheet

Specifications

Base Product Number: IRFP4468
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19860 pF @ 50 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Series: HEXFET®
Supplier Device Package: TO-247AC
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA