SI2305ADS-T1-GE3 product image

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Product details

SI2305ADS-T1-GE3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: SOT-23-3 (TO-236)

Description

P-Channel 8 V 5.4A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Datasheet View datasheet

Specifications

Base Product Number: SI2305
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drain to Source Voltage (Vdss): 8 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
Series: TrenchFET®
Supplier Device Package: SOT-23-3 (TO-236)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±8V
Vgs(th) (Max) @ Id: 800mV @ 250µA