BSZ100N06LS3GATMA1 product image

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Product details

BSZ100N06LS3GATMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TSDSON-8

Description

N-Channel 60 V 11A (Ta), 20A (Tc) 2.1W (Ta), 50W (Tc) Surface Mount PG-TSDSON-8

Datasheet View datasheet

Specifications

Base Product Number: BSZ100
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-PowerVDFN
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Series: OptiMOS™
Supplier Device Package: PG-TSDSON-8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.2V @ 23µA