Product image not available

Product details

STP24NM65N

Availability on request

Manufacturer: STMicroelectronics
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 650 V 19A (Tc) 160W (Tc) Through Hole TO-220

Datasheet Not provided

Specifications

Base Product Number: STP24N
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Mfr: STMicroelectronics
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Series: MDmesh™ II
Supplier Device Package: TO-220
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 4V @ 250µA