STB12NM60N-1 product image

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Product details

STB12NM60N-1

Availability on request

Manufacturer: STMicroelectronics
Category: Transistors - FETs, MOSFETs - Single
Package: I2PAK

Description

N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole I2PAK

Datasheet View datasheet

Specifications

Base Product Number: STB12N
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
Mfr: STMicroelectronics
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 410mOhm @ 5A, 10V
Series: MDmesh™ II
Supplier Device Package: I2PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 4V @ 250µA