- Current - Continuous Drain (Id) @ 25°C
- 49A (Tc)
- Drain to Source Voltage (Vdss)
- 20 V
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 11 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds
- 810 pF @ 10 V
- Mfr
- Infineon Technologies
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Package
- Tape & Reel (TR)
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max)
- 40W (Tc)
- Rds On (Max) @ Id, Vgs
- 11mOhm @ 15A, 10V
- Series
- HEXFET®
- Supplier Device Package
- D-Pak
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±20V
- Vgs(th) (Max) @ Id
- 2.55V @ 250µA