IRF7855PBF product image

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Product details

IRF7855PBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: 8-SO

Description

N-Channel 60 V 12A (Ta) 2.5W (Ta) Surface Mount 8-SO

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 12A, 10V
Series: HEXFET®
Supplier Device Package: 8-SO
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4.9V @ 100µA