NTD4855N-1G product image

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Product details

NTD4855N-1G

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: I-PAK

Description

N-Channel 25 V 14A (Ta), 98A (Tc) 1.35W (Ta), 66.7W (Tc) Through Hole I-PAK

Datasheet View datasheet

Specifications

Base Product Number: NTD48
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc)
Drain to Source Voltage (Vdss): 25 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 12 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Series: -
Supplier Device Package: I-PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA