- Current - Continuous Drain (Id) @ 25°C
- 18A (Tc)
- Drain to Source Voltage (Vdss)
- 30 V
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 37 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 1714 pF @ 15 V
- Mfr
- Goford Semiconductor
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Power Dissipation (Max)
- 2.1W (Tc)
- Rds On (Max) @ Id, Vgs
- 5mOhm @ 10A, 10V
- Series
- G
- Supplier Device Package
- 8-SOP
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±20V
- Vgs(th) (Max) @ Id
- 2.4V @ 250µA