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Product details

SSM3K16FV,L3F

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - FETs, MOSFETs - Single
Package: VESM

Description

N-Channel 20 V 100mA (Ta) 150mW (Ta) Surface Mount VESM

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
FET Feature: -
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Operating Temperature: 150°C
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: SOT-723
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Series: -
Supplier Device Package: VESM
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 1.1V @ 100µA