SI8429DB-T1-E1 product image

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Product details

SI8429DB-T1-E1

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

P-Channel 8 V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot

Datasheet View datasheet

Specifications

Base Product Number: SI8429
Current - Continuous Drain (Id) @ 25°C: 11.7A (Tc)
Drain to Source Voltage (Vdss): 8 V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 4 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 4-XFBGA, CSPBGA
Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Series: TrenchFET®
Supplier Device Package: 4-Microfoot
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±5V
Vgs(th) (Max) @ Id: 800mV @ 250µA