DMT5012LFVW-13 product image

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Product details

DMT5012LFVW-13

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 50 V 11.7A (Ta), 51.4A (Tc) 2.7W (Ta), 51.4W (Tc) Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 51.4A (Tc)
Drain to Source Voltage (Vdss): 50 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 30 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Power Dissipation (Max): 2.7W (Ta), 51.4W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Series: -
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.3V @ 250µA