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Product details

G20N03D2

Availability on request

Manufacturer: Goford Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 30 V 9A (Tc) 1.5W (Tc) Surface Mount 6-DFN (2x2)

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 30 V
Mfr: Goford Semiconductor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 6-WDFN Exposed Pad
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Series: -
Supplier Device Package: 6-DFN (2x2)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 250µA