NVMFS4C308NWFT1G product image

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Product details

NVMFS4C308NWFT1G

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: Not provided

Description

N-Channel 30 V 17.2A (Ta), 55A (Tc) 3W (Ta), 30.6W (Tc) Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Mfr: onsemi
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Power Dissipation (Max): 3W (Ta), 30.6W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Series: Automotive, AEC-Q101
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.1V @ 250µA