G1003B product image

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Product details

G1003B

Availability on request

Manufacturer: Goford Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: SOT-23-3L

Description

N-Channel 100 V 3A 3.3W Surface Mount SOT-23-3L

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 100 V
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
Mfr: Goford Semiconductor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 3.3W
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Series: -
Supplier Device Package: SOT-23-3L
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 250µA