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Product details

GC11N65F

Availability on request

Manufacturer: Goford Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 650 V 11A 31.3W Through Hole TO-220F

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 650 V
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Mfr: Goford Semiconductor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3 Full Pack
Power Dissipation (Max): 31.3W
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Series: -
Supplier Device Package: TO-220F
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA