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Product details

GT52N10T

Availability on request

Manufacturer: Goford Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 100 V 80A 227W Through Hole TO-220

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 80A
Drain to Source Voltage (Vdss): 100 V
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2626 pF @ 50 V
Mfr: Goford Semiconductor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3 Full Pack
Power Dissipation (Max): 227W
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Series: -
Supplier Device Package: TO-220
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA