Product image not available

Product details

PSMN015-100B,118

Availability on request

Manufacturer: NXP Semiconductors
Category: Transistors - FETs, MOSFETs - Single
Package: D2PAK

Description

N-Channel 100 V 75A (Ta) 300W (Ta) Surface Mount D2PAK

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Mfr: NXP Semiconductors
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 300W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Series: -
Supplier Device Package: D2PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA