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Product details

IRF60B217

Availability on request

Manufacturer: International Rectifier
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 60 V 60A (Tc) 83W (Tc) Through Hole PG-TO220-3-1

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
Mfr: International Rectifier
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-220-3
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Series: HEXFET®
Supplier Device Package: PG-TO220-3-1
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.7V @ 50µA