NTTFS6H888NTAG product image

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Product details

NTTFS6H888NTAG

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 80 V 4.7A (Ta), 12A (Tc) 2.9W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 80 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
Mfr: onsemi
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Series: -
Supplier Device Package: 8-WDFN (3.3x3.3)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 15µA