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Product details

DMN26D0UFB4-7B

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 20 V 240mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
FET Feature: -
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14.1 pF @ 15 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: 3-XFDFN
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
Series: -
Supplier Device Package: X2-DFN1006-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 900mV @ 250µA