RBA250N10CHPF-4UA02#GB0 product image

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Product details

RBA250N10CHPF-4UA02#GB0

Availability on request

Manufacturer: Renesas Electronics America Inc
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 100 V 250A (Ta) 1.8W (Ta), 348W (Tc) Surface Mount TO-263-7

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Mfr: Renesas Electronics America Inc
Mounting Type: Surface Mount
Operating Temperature: 175°C
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 125A, 10V
Series: -
Supplier Device Package: TO-263-7
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.8V @ 250µA