BSS84AKQBZ product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

BSS84AKQBZ

Availability on request

Manufacturer: Nexperia USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: DFN1110D-3

Description

P-Channel 50 V 270mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Drain to Source Voltage (Vdss): 50 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Mfr: Nexperia USA Inc.
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 3-XDFN Exposed Pad
Power Dissipation (Max): 420mW (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Series: Automotive, AEC-Q100
Supplier Device Package: DFN1110D-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): +12V, -20V
Vgs(th) (Max) @ Id: 2.1V @ 250µA