IPB65R115CFD7AATMA1 product image

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Product details

IPB65R115CFD7AATMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 650 V 21A (Tc) 114W (Tc) Surface Mount PG-TO263-3

Datasheet View datasheet

Specifications

Base Product Number: IPB65R
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Series: CoolMOS™
Supplier Device Package: PG-TO263-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4.5V @ 490µA