- Current - Continuous Drain (Id) @ 25°C
- 3.6A (Ta)
- Drain to Source Voltage (Vdss)
- 20 V
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 4.5V
- FET Feature
- -
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 12 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds
- 744 pF @ 20 V
- Mfr
- Nexperia USA Inc.
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Bulk
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation (Max)
- 490mW (Ta), 4.63W (Tc)
- Rds On (Max) @ Id, Vgs
- 60mOhm @ 3.6A, 4.5V
- Series
- -
- Supplier Device Package
- TO-236AB
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±12V
- Vgs(th) (Max) @ Id
- 900mV @ 250µA