PSMN8R5-100PSFQ product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

PSMN8R5-100PSFQ

Availability on request

Manufacturer: NXP Semiconductors
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220AB

Description

N-Channel 100 V 98A (Ta) 183W (Ta) Through Hole TO-220AB

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 98A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3181 pF @ 50 V
Mfr: NXP Semiconductors
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-220-3
Power Dissipation (Max): 183W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 25A, 10V
Series: -
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA