PSMN018-100ESFQ product image

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Product details

PSMN018-100ESFQ

Availability on request

Manufacturer: NXP Semiconductors
Category: Transistors - FETs, MOSFETs - Single
Package: I2PAK

Description

N-Channel 100 V 53A (Ta) 111W (Ta) Through Hole I2PAK

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 53A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1482 pF @ 50 V
Mfr: NXP Semiconductors
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max): 111W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Series: -
Supplier Device Package: I2PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA