2301H product image

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Product details

2301H

Availability on request

Manufacturer: Goford Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

P-Channel 30 V 2A (Ta) 1W (Ta) Surface Mount SOT-23-3

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Mfr: Goford Semiconductor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 3A, 10V
Series: -
Supplier Device Package: SOT-23-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 2V @ 250µA