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NTHD4P02FT1G product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

NTHD4P02FT1G

Availability on request

Manufacturer
onsemi
Category
Transistors - FETs, MOSFETs - Single
Package
ChipFET™

Description

P-Channel 20 V 2.2A (Tj) 1.1W (Tj) Surface Mount ChipFET™

Datasheet Not provided
Specifications
Base Product Number
NTHD4
Current - Continuous Drain (Id) @ 25°C
2.2A (Tj)
Drain to Source Voltage (Vdss)
20 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
FET Feature
Schottky Diode (Isolated)
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 10 V
Mfr
onsemi
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case
8-SMD, Flat Lead
Power Dissipation (Max)
1.1W (Tj)
Rds On (Max) @ Id, Vgs
155mOhm @ 2.2A, 4.5V
Series
-
Supplier Device Package
ChipFET™
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±12V
Vgs(th) (Max) @ Id
1.2V @ 250µA